? 2018 ixys corporation, all rights reserved ds100888a(1/18) x2-class power mosfet IXTH48N60X2A v dss = 600v i d25 = 48a r ds(on) ? ? ? ? ? 65m ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 200 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 65 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 600 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 600 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c48a i dm t c = 25 ? c, pulse width limited by t jm 96 a i a t c = 25 ? c 20 a e as t c = 25 ? c 1.5 j dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c 660 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13 / 10 nm/lb.in weight 6 g advance technical information n-channel enhancement mode avalanche rated features ? international standard package ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls g = gate d = drain s = source tab = drain to-247 g s d d (tab) aec q101 qualified
ixys reserves the right to change limits, test conditions, and dimensions. IXTH48N60X2A note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-247 (ixth) outline r l1 a2 q e a d c b a b c l d s d2 e1 a2 a2 a2 e 0p1 ixys option a1 b4 b2 d1 0p o 0k m d b m + o j m c a m + 1 2 3 4 + + pins: 1 - gate 2, 4 - drain 3 - source source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 48 a i sm repetitive, pulse width limited by t jm 192 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 400 ns q rm 6 ???????????? c i rm 30 a i f = 24a, -di/dt = 100a/ s v r = 100v symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 24 40 s r gi gate input resistance 1.2 ? c iss 4300 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 3280 pf c rss 6.4 pf c o(er) 150 pf c o(tr) 665 pf t d(on) 19 ns t r 26 ns t d(off) 50 ns t f 15 ns q g(on) 76 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 22 nc q gd 28 nc r thjc 0.19 ? c/w r thcs 0.21 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 3 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss
? 2018 ixys corporation, all rights reserved IXTH48N60X2A fig. 1. output characteristics @ t j = 25 o c 0 8 16 24 32 40 48 00.511.522.53 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ t j = 125 o c 0 8 16 24 32 40 48 012345678 v ds - volts i d - amperes v gs = 10v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 24a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 48a fig. 5. r ds(on) normalized to i d = 24a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 20 40 60 80 100 120 i d - amperes r ds(on) - normalized v gs = 10v t j = 125 o c t j = 25 o c fig. 2. extended output characteristics @ t j = 25 o c 0 20 40 60 80 100 120 140 0 5 10 15 20 25 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 6. normalized breakdown & threshold voltages vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -60 -40 -20 0 20 40 60 80 100 120 140 160 t j - degrees centigrade bv dss / v gs(th) - normalized bv dss v gs(th)
ixys reserves the right to change limits, test conditions, and dimensions. IXTH48N60X2A fig. 8. input admittance 0 10 20 30 40 50 60 70 80 90 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c fig. 7. maximum drain current vs. case temperature 0 8 16 24 32 40 48 56 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 9. transconductance 0 10 20 30 40 50 60 70 80 0 102030405060708090 i d - amperes g f s - siemens t j = - 40 o c 125 o c 25 o c fig. 10. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 160 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v sd - volts i s - amperes t j = 125 o c t j = 25 o c fig. 11. gate charge 0 2 4 6 8 10 0 1020304050607080 q g - nanocoulombs v gs - volts v ds = 300v i d = 24a i g = 10ma fig. 12. capacitance 1 10 100 1,000 10,000 100,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss
? 2018 ixys corporation, all rights reserved fig. 15. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 15. maximum transient thermal impedance aaaaa 0.3 ixys ref: t_48n60x2a (x6-s602) 1-16-18 IXTH48N60X2A fig. 14. forward-bias safe operating area 0.1 1 10 100 1000 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 25 o c sin g le pulse 25 s 100 s r ds( on ) limi t 1ms 10ms fig. 13. output capacitance stored energy 0 5 10 15 20 25 30 35 0 100 200 300 400 500 600 v ds - volts e oss - microjoules
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